A study of Fe-Dopants for growth of semi-insulating InP by MOCVD.
01 January 1986
SIMS depth profiling has been used to measure the Fe concentrations in Fe-doped InP epitaxial layers, grown by MOCVD, using a variety of dopant sources. Iron-olefin carbonyl sources were found to give smoother and more uniform doping profiles than Fe (C5H5)2, although similar electrical properties were obtained, providing the Fe concentration was below ~8x10(18)cm-3. For the majority of samples analyzed, resistivities >-4x10(7) omega- cm were measured. From the temperature dependence of the resistance of the material, an activation energy of 0.68 eV was calculated, in excellent agreement with the values previously obtained for bulk Fe-doped InP.