An Optoelectronic Dynamic Random Access Memory Cell Utilizing a Three Terminal N-Channel Self-Aligned Double Heterostructure Optoelectronic Switch

The Double Heterostructure Opto-Electronic Switch is demonstrated as a novel dynamic random access opto-electronic memory cell in an N- channel self-aligned three terminal configuration. The cell employs a single polarity of bias and XY selectivity using the inversion channel contact and the optical input/output port. The switching powers, delays and refresh capability offer the promise for large scale integrated circuits.