Anisotropic Strain Relaxation in Buried CoSi sub 2 Layers Formed by Mesotaxy.

The lattice mismatch in and out of the orientation direction was measured in layers of CoSi sub 2 grown by high dose implantation and annealing. A comparison of (111), (100), and (110) orientations showed that the lateral mismatches were similar but the perpendicular mismatch increased monotonically through the series. The differences in the degree of relaxation of the 3 orientations provides a possible explanation for the observed anisotropy in the electrical properties.