Applications of Dielectric Layers for III-V Compound Semiconductor Device Fabrication

15 November 1989

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In addition to the conventional integrated circuit fabrication applications, dielectric layers play other crucial roles in the fabrication of electronic and optoelectronic devices based on GaAs and InP. In this presentation we will enumerate three specific applications. Firstly, the importance of low stress encapsulants (e.g., AIN, PSG) for post implant activation will be discussed in detail. Secondly, we will present results on doped oxide diffusion for producing thin p+ layers in GaAs. As a third example, we will describe an application unique to the fabrication of optoelectronic devices, namely reflectivity modifying coatings such as on laser facets.