Arsenic Redistribution During Cobalt Silicide Formation

The redistribution of arsenic during cobalt silicide formation was studied. For the case of cobalt monosilicide (CoSi) formation, arsenic was implanted initially either into the Co or into the Si substrate and for the case of cobalt disilicide (CoSi sub 2) formation, arsenic was implanted initially into either CoSi or into Si substrate. The distribution profiles of arsenic were monitored before and after heat treatment using RBS analysis. The redistribution profiles of arsenic were found to be determined by the kinetics of cobalt silicide formation and by the annealing at high temperature.