Assessment of GaAs Transistor Processing by Use of Advanced Scanning Cathodoluminescence Techniques

We have used the focussed probe of the scanning electron microscope to excite cathodoluminescence from individual, electrically-characterized transistors. The excited regions were the channels of Schottky-gated field effect transistors, fabricated by ion implantation into undoped liquid encapsulated Czochralski GaAs. We found a correlation between the width of the main band edge luminescence peak and the threshold voltage of each transistor.