Atmospheric OMVPE Growth of High Quality Long Wavelength Lasers Using Tertiarybutylarsine

Using tertiarybutylarsine (TBA) as a substitute for AsH sub 3 we have been able to grow by atmospheric pressure OMVPE, low threshold, high efficiency InGaAsP/InP which appear to be equivalent to those grown using AsH sub 3. To date we have grown semi-insulating planar buried heterostructure (SIPBH) lasers oscillating at ~1.3microns wavelength (0.95 eV) with lowest current thresholds near 15 mA and differential efficiencies (per facet) in excess of 20%.