Atomic and molecular relative secondary ion yields of 46 elements in Si for O sub 2 sup + and Cs sup + bombardment.

Separate implants of 46 elements into crystalline Si have been SIMS analyzed with a Cameca IMS-3F to determine relative ion yields for atomic and molecular ions. Results have been obtained for M sup ++, M sup +, M sub 2 sup +, and MO sup +, MSi sup +, and MOSi sup +, where M represents the element, secondary ions for 6 keV O sub 2 sup + primary ions, and for M sup -- , M sup -, M sub 2 sup -, MCs sup -, MSi sup - and MCsSi sup - secondary ions for 14.5 keV Cs sup + ions. In general, the relative yields for the two primary beams are complementary. The positive secondary ion data follow an inverse exponential with respect to ionization potential except for F. The negative secondary ion data show a relationship to electron affinity. Routine detection limits and analysis conditions are tabulated for each element and each primary species. The relative yields of the molecular ions have been used to evaluate many typical mass interferences.