Avalanche build-up time of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading and multiplication regions.
01 January 1986
In this paper we report on the first measurements of the avalanche build-up time of InP/InGaAsP/ InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions (SAGM-APDs). Measurements on several different device structures reveal that the avalanche build-up time (gain-bandwidth product) decreases (increases) with increasing carrier concentration in the multiplication region. The shortest build-up time that we have observed was M(o) x 4.2 ps which corresponds to a gain-bandwidth product of 38 GHz.