Avalanche photodiodes with separate absorption and multiplication regions grown by metalorganic vapor.
01 January 1986
InP/InGaAs avalanche photodiodes with separate absorption and multiplication regions (SAM-APDs) have been fabricated from wafers grown by atmospheric-pressure metalorganic chemical vapor deposition. These APDs exhibit low dark current and good quantum efficiency. The pulse response exhibits the two component response typical of the SAM-APD structure. The slow component is a 6 ns and the fast component is 100 ps.