Background carrier concentration of InGaAs grown by hydride VPE.

AsCi sub 3-derived HCI has been used to grow InGaAs in a hybride VPE reactor. It is shown that this modification is not sufficient to reduce the background carrier concentration below the 10 sup 15 cm sup (-3) range. The observed level is shown to increase with increasing mole fraction of arsine under conditions of constant growth rate indicating that the arsine source is a predominant factor in background carrier concentration. An inverse proportionality between carrier concentration and growth rate is also observed and a model is presented which accounts for this relationship. This model further supports the conclusion that the arsine source is the main factor determining the level of unintentional doping of InGaAs grown in our hydride reactors.