Band alignments for pseudomorphic InP/In sub x Ga sub (1-x) heterostructures for growth on (001) InP.

Estimates of the anticipated band alignments for pseudomorphic InP/In sub x Ga sub (1-x) As heterosturctures for growth on (001) InP are presented; wherein = x = 1.0. Linearity and transitivity of the valence band offset, DELTA E sub nu, are assumed for given in-plane lattice parameter, a || == a sub o (InP). Valence band offsets for ternary heterojunctions are obtained via linear interpolation of the self-consistent interface calculations of Van deWalle and Martin (unpublished), whereas DELTA E vu for the lattice matched (In, Ga) As/InP heterojunction is taken as an input parameter. It is found that DELTA E sub c shows a rather gradual increase for 0 = x 0.53, with a abruptly change in slope for x > 0.53. The present estimates imply an increase in DELTA E sub c by more than 0.2 eV as x -> 1.0 relative to the lattice matched value, and that the partitioning of DELTA E sub g between conduction and valence band in strained heterostructures maintains it's lattice matched value. Potential applications are reviewed in brief.