Band Offset Measurements of ZnTe/AlSb Heterojunctions
31 January 1990
X-ray core level photoemission measurements of thin, MBE grown ZnTe/AlSb heterojunctions were undertaken in order to obtain the valence and conduction band offsets for this materials system. Previous literature data for the Zn3d core level in ZnTe showed excellent agreement when referenced to the Fermi level of Au, but poor agreement when referenced to the valence band edge.