Base transport dynamics in a Heterojunction Bipolar Transistor.
01 January 1986
We have used Hot Electron Spectroscopy to study nonequilibrium electron transport in the base of a Heterojunction Bipolar Transistor. Electrons injected from a n-type A1GaAs emitter into a p-type GaAs base were found to be strongly scattered such that they could be characterized by an effective electron temperature after traversing several hundred Angstroms. The effective electron temperature, measured at 4.2 K, was found to be 150 K for a sample having a 900 Angstrom base region and 500 K for a sample having a 450 Angstrom base region.