Basic principles of plasma etching for silicon devices.
01 January 1984
A recent review of plasma etching is updated and edited to emphasize material which bears on silicon device processing. Theory and practice of plasma etching are critically reviewed and some unifying principles are extended to explain a large body of experimental data. These basic concepts can be used to select new etchants and plasma etching parameters. This review is to be included as a chapter in the book, "VLSI Electronics, Vol.8", edited by D.L. Brown and N.E. Einspruch.