Be-implanted In(0.53)Ga(0.47)As diodes with ideal forward current- voltage characteristics.
01 January 1984
The temperature dependence of the forward current-voltage characteristics of Be-implanted p+n junctions in In(0.53)Ga(0.47)As is presented. The results are interpreted on the basis of a diffusion current component and a recombination current component. The best diodes obey a pure diffusion current equation, J=J(o)(T) exp (qV/kT) for a current range of six decades and for temperatures above 200K.