B.S.T.J. Briefs: A 5-Gigacycle Tunnel Diode Oscillator with 9-MilliwattOutput from a Single Diode

T H E B E L L BY8TEM TECHNICAL J O U R N A L , NOVEMBER 1903 A 5-Gigacycle Tunnel Diode Oscillator with 9-MilIiwatt Output from a Single Diode By M. V. SCHNKIDEIt (Manuscript received Septeml>er 2-1, 1063) Thin brief paper describes a tunnel diode oscillator which has been built by using a single diode in a low-impedance strip transmission line. Tunnel diodes were made from p-type zinc-doped gallium arsenide with a doping level of 7 X 1011 camel's per cubic centimeter. Peak currents in the range of 150-300 ma are obtained by alloying tin pellets with a diameter of approximately 1 mil to the gallium arsenide wafer. A new type of mount has been used in order to reduce the package reactance a* well as the contact resistance of the diode in the transmission METALLIC POST WAFER ALLOYtO P E L L E T ' m MYLAR WITH FVAPORATEO-^. BIAS RESISTANCE OC SUPPLY TERMINALS Fig. 1 -- Tunnel diode mounted in balanced strip transmission line.