Chemical Beam Epitaxial Growth and Capacitance - Voltage Characterization of Si delta-Doped GaAs.
01 January 1988
High quality GaAs layers have been grown by chemical beam epitaxy using triethylgallium and arsine. Undoped GaAs epilayer with net acceptor concentration N sub A - N sub D = 3x10 sup (14) cm sup (-3) has been obtained at a low growth temperature of 500C. Si dopant diffusion at such low temperature during growth is negligible. Using monolayer doping technique epilayers with Si impurities localized in a 2-dimensional plan were prepared. Capacitance voltage profiling showed a high sheet electron concentration of 1x10 sup (13) cm sup (-2) and peak widths of 22angstroms and 18angstroms at 300K and 77K, respectively, which are the narrowest ever reported. For samples grown or annealed at higher temperatures, significant impurity diffusion was observed.