Chemical Beam Epitaxial Growth of Extremely High Quality InGaAs on InP
01 January 1986
Full widths at half-maximum intensity of the (004) Bragg reflection peak as small as 24 arcs are obtained from InGaAs epilayers of 4-6 micrometer thick.
-
Industries
IndustriesTrusted networks with superior performance to meet the demands and opportunities of your digital transformation.
-
Network solutions
Network solutionsNetworks with superior performance, and security. Now you can reduce operational complexity and ensure resilience across your operations. Enrich your customers' experience, create new value and expand your opportunities.
-
Insights and innovation
Insights and innovationGet expert insights so you can break down the barriers that are holding you back.
-
Collaborate with us
-
We are Nokia
We are NokiaWe are a B2B technology innovation leader in networking, bringing together the world's people, machines and devices to realize the potential of digital in every industry.
Select your country
We have limited content available for some countries. Find office information and country specific information through our country hub.