Chemical Beam Epitaxial Growth of Extremely High Quality InGaAs on InP
01 January 1986
Full widths at half-maximum intensity of the (004) Bragg reflection peak as small as 24 arcs are obtained from InGaAs epilayers of 4-6 micrometer thick.
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01 January 1986
Full widths at half-maximum intensity of the (004) Bragg reflection peak as small as 24 arcs are obtained from InGaAs epilayers of 4-6 micrometer thick.