Chemical Beam Epitaxial-Growth of GaAs Using Triethylgallium and Arsine
02 September 1988
The epitaxial growth and characterization of high quality GaAs using triethylgallium and arsine in the MBE system is efficiency of arsine, V/III ratio, and the growth temperature. P-type conductivity is generally observed with carbon as the residual impurity. Semi insulated layers can be obtained under proper growth conditions. In light of the surface chemical kinetics model we have developed, microscopic reaction mechanisms governing the CBE growth are discussed and correlations to the material quality are identified.