Chemical Beam Epitaxial Growth of Very Low Threshold Ga(0.47)In (0.53)As/InP Double-Heterostructure and Multiquantum Well Lasers.

We report the successful preparation by chemical beam epitaxy (CBE) and performance characteristics of Ga(0.47)In(0.53)As/InP double-heterostructure (DH) and multiquantum well (MQW) lasers emitting at 1.47-1.72microns. The very low threshold current densities, J(th), of 1.3 kA/cm(2) and 1.5 kA/cm(2) obtained for DH and MQW laser wafers, respectively, suggest that the present materials and hetro-interfaces are superior to those obtained previously by other techniques. In fact, these J (th)'s are the lowest obtained thus far for such lasers. Differential quantum efficiency of 18% per facet was obtained for both DH and MQW lasers.