Chemical beam epitaxially grown InP/InGaAsP interference mirror for use near1.55micron wavelength.
01 January 1987
An interference mirror for use near 1.55 micron wavelength was constructed using InP and lattice matched InGaAsP on an InP substrate with chemical beam epitaxy methods. The maximum reflectivity was 92.5% at 1.46micron. The design value was 94.75% at 1.55micron. The mirror was used as an output mirror in a synchronously-pumped mode-locked TI:KCI color center laser