Chemical Beam Epitaxy for III-V Semiconductor Heterostructures
06 July 1987
Chemical beam epitaxy (CBE) combines many important advantages of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MO_CVD). Very high quality epilayers and multi-layer heterostructures including quantum wells and superlattices of GaAs/AlGaAs and GaInAs(P)/InP which have been prepared by CBE.
Single quantum wells and superlattices of Ga sub 0.47 In sub 0.53 As/InP were studied in detail by High Resolution Transmission Electron Microscopy (HRTEM), optical absorption, photoluminescence (PL), photoluminescence excitation (PLE), and photocurrent (PC) spectroscopies.