Chemical Beam Epitaxy of III-V Semiconductor Heterostructures.
01 January 1987
Chemical beam epitaxy (CBE) combines many important advantages of molecular beam epitaxy (MBE) and organometallic chemical vapor deposition (OMCVD). This paper briefly reviews some of the recent progress in the preparation of Ga sub (0.47) In sub (0.53) As/InP and GaInAsP/InP heterostructures including quantum wells and superlattices, and their device applications.