Chemical Beam Epitaxy of III-V Semiconductors.
01 January 1987
Chemical beam epitaxy (CBE) is the newest development in epitaxial growth technology. It combines many important advantages of molecular beam epitaxy (MBE) and organo-metallic chemical vapor deposition (OM-CVD). Our results undisputedly established CBE as a superior technique for producing extremely high quality multi-layer heterostructures and advanced the epitaxial growth technology beyond both MBE and OM-CVD.