Chemical beam epitaxy of InGaAs.

In0.53Ga0.47As lattice-matched to InP substrate has been grown by the newly developed chemical beam epitaxy (CBE) using trimethylinduim and triethylgalluim as the group III sources and trimethylarsine (TMAs) as the As source. Epilayers with lattice-mismatch delta(a)/a 1 x 10(-3) have been reproducibly obtained with extreme uniformly in both composition and layer thickness over a large area of 3.8-cm diameter (limited by the present substrate holder size) without the need of substrate rotation during growth. Surface morphologies were routinely featureless and mirror-like as observed by Normaski phase contrast microscope. Comparing with high quality In0.53Ga0.47As epilayers grown by molecular beam epitaxy (MBE), the CBE-grown In0.53Ga0.47As epilayers have similar linewidths but can have substantially higher 300-K photoluminescence intensities.