Chemical beam epitaxy of InGaAs.
01 January 1985
In0.53Ga0.47As lattice-matched to InP substrate has been grown by the newly developed chemical beam epitaxy (CBE) using trimethylinduim and triethylgalluim as the group III sources and trimethylarsine (TMAs) as the As source. Epilayers with lattice-mismatch delta(a)/a