Chemical Beam Epitaxy of InP and GaAs.
01 January 1984
A new epitaxial growth technique: The Chemical Beam Epitaxy (CBE) was demonstrated and investigated with growth of InP and GaAs. In this technique, all the sources were gaseous Group III and Group V alkyls. The In and Ga were derived by the pyrolysis of either trimethylindium (TMIn) or triethylindium (TEIn), and trimethygallium (TMGa) or obtained by thermal decomposition of triethylphosphine (TEP) and trimethylarsine (TMAs) in contact with heated Ta or Mo at 950-1200C, respectively.