Chemical vapor deposition for III-V compound semiconductor devices.
01 January 1984
The growth of III-V compound semiconductors by chemical vapor deposition (CVD) was first demonstrated twenty-five years ago. Today, CVD materials technologies dominate the growth of III- V epitaxial layers. The principal CVD techniques employed today are the halide, the hydride and the metalorganic CVD processes. This paper will briefly review these epitaxial materials technologies for the growth of III-V's.