Clustering mechanism during growth of GaAs on silicon

Cluster growth experiments of Ga on As terminated Si(111) are reported and shown to simulate Ga-As coevaporation in the case of low Ga and very low As fluxes. 

Based on these observations a model for GaAs clustering is proposed which explains qualitatively the absence of post-deposit clustering and can be quantified in order to explain recent substrate temperature dependent GaAs cluster size measurements by TEM techniques.