Coexistence of excitonic lasing with electron-hole plasma spontaneous emission in one-dimensional semiconductor structures

01 January 2001

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We report that excitonic lacing gaits coexists with spontaneous optical emission characteristic of an electron-hole plasma in highly photoexcited one-dimensional semiconductors. The experiments probe quantum T-wire laser structures optimized for high photoexcitation. Evidence of dense electron-hole plasma is clearly seen in the spontaneous recombination measured when lacing emission displays distinct excitonic character. These findings differ strikingly from those in higher dimentional semiconductors, and offer insights on optical processes considered by recent theories of dense electron-hole plasmas. (C) 2001 Published by Elsevier Science Ltd.