Compound semiconductor photodiodes.

This memo provides an introduction to the operating principles and properties of compound semiconductor photodiodes, which are finding use as photoreceivers in optical fiber communications systems. Factors affecting photodiode spectral and temporal response, quantum efficiency, and dark current are outlined, and the gain, bandwidth, and excess noise of avalache photodiodes (APDs) are described. The characteristics of p-i-n diodes and APDs fabricated from the GaInAs, GaInAsP, A1GaAsSb, and HgCdTe material systems are covered in detail. Finally, progress toward integrated photodiode structures for a range of applications is discussed.