Contact Resistance in Organic Transistors that Use Source and Drain Electronics Formed by Soft Contact Lamination

Soft contact lamination of source/drain electrodes supported by gold-coated high-resolution rubber stamps against organic semiconductor films can yield high performance organic transistors. This paper presents a detailed study of the electrical properties of these devices, with an emphasis on the nature of tha laminated contacts with the p and n-type semiconductors pentacene and copper hexadecafluorophthalocyanine, respectively. The analysis uses models developed for characterizing amorphous silicon transistors.