Continuous wave InGaAsP/InP Fabry-Perot lasers on silicon

We present 1.55 mum InGaAsP/InP Fabry-Perot lasers on silicon realized by a die-to-wafer CMOS compatible SiO2/SiO2 bonding process. The devices run under continuous wave operation at room temperature with a maximal output power of 4 mW and a threshold current of 108 mA at 15degC.