Control of a natural permeable CoSi(2) base transistor.

We report results on the fabrication of a natural permeable base transistor in a Si/CoSi(2)/Si heterostructure using MBE. No photolithography is required, the transistor action being controlled by MBE growth conditions through the density and size of natural openings in the silicide base. The electrical characteristics of devices processed from such heterostructures are intimately related to the presence of these openings. Common base current gains in the range 0.01 to 0.95 have been observed and correlated with the size and density of the openings.