Control of MBE surface step-edge kinetics to make an atomically smooth quantum well

By cleaved-edge overgrowth with molecular beam epitaxy and growth-interrupt-anneal, molecular step-edge kinetics on the epitaxial surface grown on the cleave has been successfully controlled. A GaAs quantum well exactly integral monolayers thick with an atomically smooth hetero-interfaces has been demonstrated, which shows spatially uniform and spectrally sharp photoluminescence. Precise measures of the localized islands or pits with stable characteristic shapes on the surface fractional monolayers thick and successful modeling of these shapes suggest that the driving force toward the smooth surface relies on the fundamental thermodynamics and bonding issues among surface atoms.