Corona-Charge Evaluation of Thermal SiO sub 2 Growth by Singal Wafer and Batch Methods

Blanket 3 to 5 nm SiO sub 2 films were grown on prime p-type Czochral-ski 200-mm Si wafers by thermal oxidation in O sub 2 ambients. Two heating methods, a bell-jar furnace or incandescent lamps, were employed for signle wafer rapid thermal oxidation (RTO). The batch method used a vertical furnace for heating in thermal equilibrium. Corona-charge electrical measurements on the unpatterned as-grown oxide films were used to determine film thickness, total oxide charge, flat band voltage and effective charge density (Q sub (EFT)), mid-gap density of interface traps (DIT), tunneling field, generation lifetime, bulk and near surface recombination lifetimes, mobile charge, and Fe-B pair lifetime signatures.