Correlation between resonantly excited magnetic-field split donor-bound exciton components with their excited state emission analogues in GaAs grown by molecular beam epitaxy.

We relate each resonantly excited spin-split component of the transition involving the first rotator state of the donor-bound exciton complex with its analogous emission component in which the donor electron returns to an excited state in the presence of a magnetic field. The allowed and forbidden transitions for resonant excitation and emission of this system for two different chemical donors are observed and are compared with their calculated values.