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    Correlation of Free Carrier Concentration Measurements in GaAs by Non-Contact Optical Electron Beam Electroreflectance (EBGR) and Photoreflectance (PR) to Electrical Hall Effect

Correlation of Free Carrier Concentration Measurements in GaAs by Non-Contact Optical Electron Beam Electroreflectance (EBGR) and Photoreflectance (PR) to Electrical Hall Effect

27 November 1989

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We have used the non-contact modulation spectroscopies electron beam electroreflectance (EBER) and photoreflectance (PR) to measure optical transitions at the E sub o band gap in a series of N-type Si-doped GaAs. The free carrier concentrations within these samples were measured by Hall effect to cover a range between 10 sup 15 cm sup -3 and 2 x 10 sup 17 cm sup -3.