Critical Layer thickness and strain relaxation measurements in GaSb(001)/AlSb structures.

Measurements of critical layer thicknesses and strain relaxation have been made for AlSb single layers and GaSb/AlSb superlattices on GaSb(001) using ion scattering particle induced x-ray techniques, x-ray diffraction, and Raman scattering. The ion beam techniques and x-ray diffraction indicate a critical thickness on the order of 100 - 170angstroms. Raman scattering from superlattice samples using 5145angstroms excitation shows the most rapid strain relaxation versus layer thickness and indicates a lower apparent critical thickness of order 50 - 100angstroms.