Crystal orientation of GaAs islands grown on SrTiO3 (001) by molecular beam epitaxy
06 July 2009
The growth of GaAs islands on (001)-oriented SrTiO3 (STO) substrates by molecular beam epitaxy is studied. A competition between (111)- and (001)-oriented islands takes place. It is shown that this competition is driven by the interface energy and the critical nucleation volume of the GaAs/STO system. Perspectives are proposed to control this competition in order to define reliable growth procedures for the monolithic integration of GaAs based heterostructures on crystalline STO/Si(001) templates. (C) 2009 American Institute of Physics. {[}DOI: 10.1063/1.3168500]