CVD of Zr-Sn-Ti-O Thin Films by Direct Injection of Solventless Liquid Precursor Mixtures

Zirconium tin titanate (ZTT) thin films were successfully grown by chemical vapor deposition (CVD) using directly injected solventless liquid mixtures of metal-organic precursors ML sub 4, where M represents Zr, Sn, and Ti, and L represents diethylamide 1, dimethylamide 2, and t-butoxide 3, respectively. Rutherford backscattering analysis of the ZTT films revealed that the film compositions were affected by the deposition temperatures. The films deposited at 300C from precursor 3 showed a low leakage current of 10 sup 8 A/cm sup 2 at 1V, which was further improved after thermal anneal under N sub 2 at 400C for 30min.