CW Operation of GaInAsSb/A1GaAsSb Lasers up to 190K.

Ga(0.84)In(0.16)As(0.15)Sb(0.85)Al(0.27)Ga(0.73)As(0.04)Sb (0.96) double heterostructures were grown by liquid phase epitaxy and processed into injection lasers. The lowest room temperature threshold current density for broad area lasers was 7 kA/cm (2), for an active layer thickness 0.8-1microns. Stripe lasers operated CW up to 190K.