Czochralski growth and characterization of GaSb.

Single crystal GaSb is important as a substrate for long wavelength (>=1.5micron) detectors and lasers. Procedures for the reproducible synthesis of GaSb, and Czochralski growth of single crystals with varied stoichiometry are discussed. The distribution of dopants including Te, Se, Si and Ge was studied and the dependence of carrier concentration on dopant concentration (determined by atomic absorption analysis) is reported. In the Te concentration range studied, 1.5 x 10(17)-3 x 10(19) cm(-3), the carrier concentration is always substantially less than the Te concentration ranging from =0.25 at low Te to =0.14 at high Te.