Dark noise of Ga(0.47)In(0.53)As photoconductive detectors.

We have measured the dark noise of planar, interdigitated and vertical Ga(0.47)In(0.53)As photoconductive detectors in the range 0-500 MHz. The dark noise follows the expression of generation- recombination noise after the introduction of a noise factor a. The study shows that the highly resistive devices with low dark noise normally have lower photoconductive gain, while those with high dark current and high noise have higher photoconductive gain. Combining high and low resistive materials may be possible to obtain devices with high gain and low noise.