DC and Microwave Characteristics of Modulation Doped Ga sub (0.47) In sub (0.53) As/InP HFET

The DC and microwave performance of modulation doped InGaAs/InP heterostructure HFET's (heterostructure FET), grown by atmospheric pressure organo metallic vapor phase epitaxy is reported. An extrinsic transconductance of 300 mS/mm and a best value of the cutoff frequency, F sub T = 14.1 GHz in a 1.5 microns gate device was measured at room temperature. Improved performance of the Schottky gate device is obtained using a Au gate on the InP/InGaAs heterostructure layers. Low access resistance of 3omega-mm is obtained using a self-aligned technique with high conductivity n sup + -InGaAs top layers.