Deep UV Lithographic Response and Quantum Efficiency Calculations of Poly(Trimethylsilymethyl Methacrylate-Chloromethylstyrene) Copolymers.
06 October 1988
The random copolymer comprised to trimethylsilymethyl methacrylate, SI and chloromethylstyrene, CMS, is known to function as a negative acting deep UV resist. A range of copolymer compositions, from 0% CMS to 100% CMS, are synthesized to define a working range of sensitivity and % silicon incorporation for use in bilevel applications. The Charlesby-Pinner relationship is used to determine the quantum efficiencies of crosslinking, PHI sub (cl), and chain scission, PHI sub s, over the range of copolymer compositions. A preliminary study on the photochemistry of the poly(SI-CMS) copolymers as a function of composition, using either a pulsed KrF laser or a continuous wave mercury vapor lamp, is presented.