Defect structure in III-V compound semiconductor I: Generation and evolution of defect structures in InGaAs and InGaAsP epitaxial layer grown by hydride vapor transport vapor phase epitaxy.
01 January 1986
The generation and evolution of a novel defect structure in InGaAsP single layer and InGaAs/InP multilayer laser structures grown by hydride transport vapor phase epitaxy on (001)InP substrate has been studied in detail using both cross-section and plan-view transmission electron microscopy. Under certain growth conditions a unique interfacial dislocation tangle, having the shape of a pyramid, is formed at InGaAs/InP and InGaAsP/InP interfaces. These pyramidal-dislocation-tangles, or PDT- defects, become the source for special type of edge dislocation lying in the (110) plane with the line direction oriented close to the [001] growth direction. X-ray micro-analysis indicates that the interfacial precipitate, which induces the generation of the PDT-defect, contains excess GA and P. The possible cause of the formation of the PDT-defect is discussed.