Defects in vapour-grown silicon

A detailed account (including 14 illustrations and 9 literature references), from which it is concluded that at the temperatures used for growth, the mobilities of silicon and impurity atoms, and of defects are much lower than at the melting point and that this may well have an effect on both the type of the defect and its mode of formation. Several methods have been employed in the investigation, including metallography, X-ray and electron diffraction, and transmission electron microscopy. The account includes the preparation of the samples, examination of the layers, and a description of stacking faults, which are believed to be primarily produced near the start of growth particularly when growing nuclei meet.