Depletion and enhancement mode In.53Ga47As/InP junction field- effect transistors with a p+ InGaAs confinement layer.

A self-aligned a11-In.53Ga.47As epitaxial junction field-effect transistor structure grown by MBE is described, using p+ -InGaAs as the confinement layer for the n-channel. Devices have been made to operate in either the depletion mode or the enhancement mode. Transconductances of 90 mS/mm have been observed, with low capacitance (0.7pfd/mm) and low gate leakage.