Deposition of low-stress encapsulants on InP and GaAs.
03 June 1986
AlN layers deposited by D.C. triode sputtering and phosphorus- doped glass layers deposited by spin-on process on GaAs and InP were investigated as encapsulants. These films have similar expansion coefficients to both GaAs and InP, minimizing the amount of strain induced in the near-surface region of the underlying wafer. We have quantified this effect by direct measurements of the stress in the films and by using secondary ion mass spectrometry profiling to measure the redistribution of Cr and Fe in encapsulated GaAs and InP respectively during high temperature processing.